High-$kappa$ and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF Performances

摘要

For the first time, we report high-$kappa$ /metal-gate pMOSFETs fabricated on high-quality 200-mm germanium-on-insulator (GeOI) wafers obtained by the Ge enrichment technique. The highest mobility peak (200 $hbox{cm}^{2}/hbox{V}cdothbox{s}$ ) and driving current ($I_{rm ON}! = !hbox{115} muhbox{A}/ muhbox{m}$ at $V_{G}! - !V_{rm th}! = !-hbox{0.8} hbox{V}$ and $V_{rm DS}! = !-hbox{1.2} hbox{V}$, for $L = hbox{0.5} muhbox{m}$) have been demonstrated for GeOI $hbox{HfO}_{2}/hbox{TiN}$ pMOSFETs on Ge layers as thin as 50 nm. As compared to silicon-on-insulator control devices, 2$ times$ enhancement of peak mobility has been achieved. Due to temperature variation experiments and technology computer-aided design simulations, we have investigated the key physical phenomena responsible for the measured OFF currents (band-to-band tunneling at high $V_{rm DS}$ and generation–recombination via the Shockley–Read–Hall process at low $V_{rm DS}$).