Reverse Temperature Dependence of Circuit Performance in High- $kappa$/Metal-Gate Technology

摘要

The temperature dependence of ring-oscillator delay of high-$kappa$ /metal- gate (HKMG) and poly-Si/SiON technologies are analyzed. HKMG gate stacks drive significantly stronger threshold temperature dependence over poly-Si/SiON. This effect, together with the reduced mobility temperature sensitivity, result in higher drive current at elevated temperature for HKMG devices. This is in contrast to poly-Si/SiON technology where the low-driven current performance-limiting corner is typically at high temperature.