STI CMP PROCESS WITH HIGH-SELECTIVITY SLURRY

摘要

A high-selectivity slurry (HSS) was characterized, and the results are presented. The material removal-rate of oxide and of polish-stop and the selectivity are shown as functions of membrane pressure, platen speed, mixing ratio, and slurry flow-rate. Process stability, within wafer uniformity, dishing, and defect results are also reported. The performance of high-selectivity slurry is compared with that of conventional slurry with patterned wafers in dishing, polish time, post-CMP film thickness, and within-die uniformity.