Direct Bonding Mechanism of ALD-Al_2O_3 Thin Films

摘要

Direct bonding mechanism of deposited alumina has been investigated from room temperature up to 1200℃. Through thermal treatments applied prior to direct bonding, it is shown that bonding interface quality can be linked to interface evolution between silicon and alumina thin film. Thanks to better understanding of bonding defect generation, high quality bonding interface using ALD-Al_2O_3 thin film have then been obtained. Even if some bonding results still deserve more investigations, a coherent direct bonding mechanism will be proposed.