Scanning Tunneling Microscopy and Spectroscopy of Bonding Mechanisms betweenAdvanced Ceramics and Thin Metal Films

摘要

The technological impact of silicon carbide, SiC, covers two distinctly diverseareas: (a) as a high-strength structural ceramic, and (b) as a high-temperature wide bandgap semiconductor. In both of these applications, metallization of the SiC surface is a necessary and important procedure. From the structural point of view, a large complex shape can be produced by joining together parts of small size and simple geometries via a metallic interlayer. From the electronic point of view, good ohmic and Schottky contacts with metals are prerequisites for SiC-based device technology. For both cases, the Ti/SiC system appears to provide desirable results. When the Ti/SiC system is annealed in the temperature range