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Horizontally grown ZnO nanowires and their application in addressable arrays of one-dimensional p-n heterojunctions

机译:水平生长的ZnO纳米线及其在一维p-n异质结可寻址阵列中的应用

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In this presentation, we present a simple methodology for formation and hierarchical assembly of electrically addressable nanowire-based semiconductor heterojunctions. These p-n junctions are oriented and formed epitaxially by planar growth of nanowires on a semiconductor substrate, as opposed to conventional approaches that use mechanical contacts. We demonstrate a practical two-step approach for scalable electrical injection into these nanowire heterojunctions. The formed heterojunctions are grown from arrays of zinc oxide nanowires and nanowalls on a semiconductor substrate. We show their blue and orange-color light emissions depending on the polarity of the applied voltage. The developed architecture could be a general methodology for fabricating addressable assemblies of nanowires useful in photovoltaics and photodetectors.
机译:在此演示文稿中,我们介绍了一种简单的方法,用于基于电可寻址纳米线的半导体异质结的形成和分层组装。与使用机械接触的常规方法相反,通过在半导体衬底上纳米线的平面生长来外延取向和形成这些p-n结。我们展示了一种可扩展的电注入这些纳米线异质结的实用两步方法。形成的异质结从半导体衬底上的氧化锌纳米线和纳米壁的阵列生长。我们根据施加电压的极性显示它们的蓝色和橙色发光。开发的体系结构可能是用于制造可用于光伏和光电探测器的纳米线可寻址组件的通用方法。

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