Optoelectronic Properties of Solution Grown ZnO n-p or p-n Core-Shell Nanowire Arrays

摘要

Sb doped ZnO nanowires grown using the low-temperature hydrothermal method have the longest reported p-type stability of over 18 months. Using this growth system, bulk homojunction films of core-shell ZnO nanowires were synthesized with either n or p-type cores and the oppositely doped shell. Extensive transmission electron microscopy (TEM) characterization showed that the nanowires remain single crystalline, and the previously reported signs of doping remain intact. The electronic properties of these films were measured, and ultraviolet photo detection was observed. This growth technique could serve as the basis for other optoelectronic devices based on ZnO such as light emitting diodes and photovoltaics.