ZnO薄膜的性质对水热生长ZnO纳米线阵列的影响

摘要

用水热法在ZnO薄膜上制备了直径、密度及取向可控的ZnO纳米线阵列.ZnO薄膜是通过原子层沉积(ALD)方法制备并在不同温度下退火处理得到的,退火温度对ZnO薄膜的晶粒尺寸、结晶质量和缺陷性质有很大的影响.而ZnO薄膜的性质对随后生长的ZnO纳米线的直径、密度及取向能起到调节控制的作用.通过扫描电子显微镜( SEM)、X射线衍射(XRD)仪和光致发光(PL)测试对ZnO薄膜和ZnO纳米线进行了表征.最后得到的垂直取向的ZnO纳米线阵列适合在发光二极管和太阳能电池等领域使用.%ZnO nanowire arrays with controlled diameter, density and orientation were prepared on the ZnO film coated substrates via hydrothermal method. The ZnO film were fabricated by atomic layer deposition (ALD) method and annealed at different temperatures. The annealing temperature has strong influences on the grain size, crystalline structure and defect property of the ZnO film. The diameter, density and orientation of ZnO nanowires depended on the features of the ZnO film. Field-emission scanning electron microscopy ( SEM), X-ray diffraction ( XRD) and photoluminescence (PL) were applied to analyze the ZnO film and ZnO nanowire arrays. The as-prepared vertical aligned ZnO nanowires are highly suitable for use in nanodevices, such as light-emitting diodes and solar cells.