Effect of current injection efficiency on efficiency-droop in InGaN quantum well light-emitting diodes

摘要

One of the most important issues in InGaN quantum well (QW) light-emitting diodes (LEDs) is the reduction in efficiency at high current density, which is referred as "efficiency-droop" [1]. Various possible explanations for the efficiency-droop in nitride LEDs include 1) carrier leakage, 2) Auger recombination, 3) decreased carrier localization at In-rich regions, 4) hole transport, and 5) junction heating. The origin of the efficiency-droop issue remains very controversial.