Enhancement of Radiative Efficiency with Staggered InGaN Quantum Well Light Emitting Diodes.

摘要

The technology on the large overlap InGaN QWs developed in this program is currently implemented in commercial technology in enhancing the internal quantum efficiency in major LED industry in US and Asia. The scientific finding from this work supported by the DOE enabled the implementation of this step-like staggered quantum well in the commercial LEDs.