Recent progress on Engineered Substrates for GaN microelectronic applications

摘要

Bulk Silicon Carbide, sapphire and Si (111) materials are today used as epitaxial substrates for high quality GaN growth due to their crystalline parameters, physical and chemical properties. In case of large volume applications of high end devices such as high power, high frequency microelectronic transistors, bulk SiC wafers might suffer from high price, low diameter and industrial availability to provide the right trade off between price and performance to enter markets such as base station applications. In contrast, bulk Silicon substrates are perfectly suited for large area applications and low cost solution while keeping the level of performance of the device high enough to enable market penetration. Nevertheless, Silicon material is not as good as SiC for thermal dissipation which is a key figure of merit for the targeted applications. Engineering these two materials (i.e. Silicon and SiC), to a hetero-substrate might be the ideal substrate solution for applications where both device performance and low cost are mandatory.rnIn this paper, we present the most recent technical developments in the field of engineered substrates based on Silicon and SiC for GaN microelectronic applications manufactured by the Smart Cut ™ technology. The suitability of engineered substrates solutions for high thermal dissipation and good quality epitaxial re-growth have been studied by simulation and demonstrated by experimentaly.