In-plane polarization properties of GaAsP/AlAs strained quantum wells on GaAs(113)A and (114)A substrates

摘要

We have investigated in-plane polarization properties of luminescence from GaAsP/AlAs tensile-strained quantum well structures grown on GaAs (113)A and (14)A substrates. with varying phosphorus composition or well width, the in-plane polarization changes sgnificantly and reaches to approx 0.4 and approx 0.3 for (113)A and (114)A substrates, respectively. It is found from the theoretical calculation that the large optical anisotropy is mainly due to the mixing of hole states induced by the strain effect.