Wide bnad gap semiconductor devices in general and GaN-based electronic and photonic devices in particular have already demonstrated an improessive performance. Excellent transport and optoelectronic properties of GaN based materials should allow us to achieve a much better performance at elevated temperatures and in a hardsh environment. In this paper, we compare important materials properties of SiC, GaN, and related wide-band semiconductors and consider recent progress in SiC and GaN-based field effect transistors and GaN-based photodetectors.
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