GaInP/AlGaAs/GaAs laser diodes with high ouput power

摘要

A combination of GaInP waveguide and AlGaAs cladding layers was used for the fabrication of GaAs-based laser diodes. The replacement of AlGaAs by GaInP in the region of high photon density promises a higher facet stability. Ridge-waveguide laser diodes processed from such layers shown a degradation rate comparable to conventional alGaAs lasers and the facets appear to be more stable. An output power up to 400 mW at 1 A driving current (impulse condition) is obtained. However, results obtained on broad-area devices show that the growth o f the GaInP/AlGaAs heterointerfaces is problematic due to As/P exchange and In carry-over.