Optimization of initial layer for highly-mismatched heteroepitaxial growth: InSb on Si

摘要

The initial buffer layer for InSb growth on Si by two-setp plasma-assisted epitaxy was optimized to improve the crystal quality of the heteropeitaxial layers. This layer grown at 210C with about 4 average monolyers, strained with longitudinal lattice missmatch around 12-13