Heteroepitaxial growth of a rotated AlInSb layer mediated by an InSb bi-layer on a Si(111) substrate

摘要

Two-step growth of an AllnSb film mediated by an InSb bi-layer on a Si(111) substrate was performed in a molecular beam epitaxy (MBE) chamber. The growth was observed by in situ reflection high energy electron diffraction. After the deposition, the samples were characterized by X-ray diffraction (XRD). It is confirmed that the grown AllnSb films werernrotated by 30° with respect to the Si substrates. The lattice mismatch between the AllnSb and the Si substrate was reduced by the rotation. Using this method, epitaxial Al_yIn_((1-y))Sb layers which have the composition ratio y of 0.22-0.65 can be achieved without thick buffer layers.