High-temperature growth of heteroepitaxial InSb films on Si(111) substrate via the InSb bi-layer

摘要

To achieve the high-temperature growth of heteroepitaxial InSb films on the InSb bi-layer, we studied the influence of substrate temperature of first layer deposition (Tsl) on the two-step growth procedure. Although the growth at higher Tsl of 240 and 280℃ is difficult to achieve using the usual procedure due to the desorption of In atoms from the InSb bi-layer, it can be realized by means of the adsorption of excess Sb atoms onto an initial InSb bi-layer prepared via √7 ×√3-In surface reconstruction. The high-temperature growth of 30°-rotated InSb films at 420℃ was demonstrated on a Si( 111) substrate with a InSb bi-layer. The electron mobility of the InSb film grown at 420℃ was about 20,000 cm~2/Vs at RT.