AFM study on MBE kink-flow growth of ordered INAs quantum dots on GaAs (001) vicinal surface misoriented towards the 010 direction

摘要

The InAs quantum dots (QD's) were grown by MBE method on the (001) GaAs vicnal surfaces misoriented to the direction [010] by the 1, 2, 3, 4 and 6 degrees. Crossing of the terraces going on such surfaces in the [110] and [-110] directions creates a net of steps which modify the surface diffusion of In adatoms. The AFM studies of the grown structures have demonstrated the relevant characteristic changes in the ensemble of InAs QD's MBE grown on such surfaces.