An Investigation of Polysilicon Emitter Bipolar Transistors with an Ozonized Polysilicon/Monosilicon Interace

摘要

This paper reports the development of a new polysilicon/monosilcon interface preparation technique to adjust bipolar transistor properties. The interest of this new technique is demonstrated using physical characterizations, static and dynamic measurements on a 200mm 0.5#mu#m BiCMOS technology.