Influence of polysilicon deposition on fabrication of power polysilicon emitter bipolar transistors

Austin P.; Caminade J.

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Influence of polysilicon deposition on fabrication of power polysilicon emitter bipolar transistors

机译：多晶硅沉积对功率多晶硅发射极双极晶体管制造的影响

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摘要

The aim was to fabricate a polysilicon emitter bipolar transistor for power applications. To this end, different polysilicon deposition steps compatible with the power bipolar technology and their influence on electrical characteristics were studied.

机译：目的是制造用于电源应用的多晶硅发射极双极晶体管。为此，研究了与功率双极技术兼容的不同的多晶硅沉积步骤及其对电特性的影响。

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来源
《Electronics Letters》 |1993年第9期|P.741-743|共3页
作者
Austin P.; Caminade J.;
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作者单位

CNRS, Toulouse, France;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
bipolar transistors; chemical vapour deposition; elemental semiconductors; oxidation; power transistors; silicon; I-V characteristics; LPCVD; SIMS depth profiles; Si; Si-SiO 2; electrical characteristics; polysilicon deposition; power bipolar technology; power polysilicon emitter bipolar transistors; thin interfacial oxide; wafer loading;

机译：双极晶体管;化学气相沉积;元素半导体;氧化;功率晶体管;硅;IV特性;LPCVD;SIMS深度剖面;Si;Si-SiO 2;电特性;多晶硅沉积;功率双极技术;功率多晶硅发射极双极晶体管;薄界面氧化物;晶片负载;

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专利

1. Investigation of boron diffusion in polysilicon and its application to the design of p-n-p polysilicon emitter bipolar transistors with shallow emitter junctions [J] . Post I.R.C., Ashburn P. IEEE Transactions on Electron Devices . 1991,第11期

机译：多晶硅中硼扩散的研究及其在浅发射极结的p-n-p多晶硅发射极双极晶体管设计中的应用
2. Assessment of a Methanol-Last Interface Treatment for Use in Polysilicon Emitter Bipolar Transistor Fabrication [J] . N. E. Moiseiwitsch, P. Ashburn, C. D. Marsh, Electrochemical and solid-state letters . 1998,第2期

机译：用于多晶硅发射极双极晶体管制造的甲醇-最后界面处理的评估
3. Minority-carrier hole diffusion length in heavily-doped polysilicon and its influence on polysilicon-emitter transistors [J] . Chen D.-L., Greve D.W. IEEE Transactions on Electron Devices . 1988,第7期

机译：重掺杂多晶硅中的少数载流子空穴扩散长度及其对多晶硅发射极晶体管的影响
4. An Investigation of Polysilicon Emitter Bipolar Transistors with an Ozonized Polysilicon/Monosilicon Interace [C] . S.Niel, C.hemandez, R.Pantel, Proceedings of the 27th European solid-state device research conference . 1997

机译：具有臭氧化的多晶硅/单晶硅界面的多晶硅发射极双极晶体管的研究
5. Studies on polysilicon emitter transistors made on zone-melting-recrystallized silicon-on-insulator [D] . Purbo, Onno Widodo 1993

机译：区域熔化再结晶绝缘体上硅制多晶硅发射极晶体管的研究
6. Self-Heating Effects In Polysilicon Source Gated Transistors [O] . R. A. Sporea, T. Burridge, S. R. P. Silva -1

机译：多晶硅源极门控晶体管中的自热效应
7. LPCVD deposition of in-situ boron-doped polysilicon and its use in polysilicon emitter transistors. [O] . Cheryl Maritan -1

机译：LPCVD沉积原位硼掺杂多晶硅及其在多晶硅发射器晶体管中的应用。
8. ESD (Electrostatic Discharge)/EOS (Electrical Overstress) Susceptibility of a Class of Bipolar RF Power Transistors: Experimental Studies on Stripline-Opposed Emitter Transistors [R] . Neelakantaswamy, P. S., Turkman, I. R. 1986

机译：EsD（静电放电）/ EOs（电过载）对一类双极射频功率晶体管的敏感性：对带状线对置发射晶体管的实验研究

Influence of polysilicon deposition on fabrication of power polysilicon emitter bipolar transistors

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