Perfect Separation of Hybrid Orientation Structure of CeO_2(100) and (110) Regions Grown on Silicon on Insulator Substrates with Lithographically Formed Trenches

摘要

The hybrid orientation structure (HOS) of the CeO_2(100) and (110) regions on Si(100) substrates is studied using electron beam induced orientation selective epitaxial growth by reactive magnetron sputtering. Two separate areas of growth are seen, with CeO_2(100) layers found to grow in areas irradiated by electrons during the growth process, and the CeO_2(110) layers growing in the areas not irradiated by the beam. The lateral orientation mapping obtained by X-ray diffraction measurements reveals the existence of transition regions between these two orientation areas. The width of the transition region is found to decrease with the underlying Si substrate resistivity as low as approximately the size of the electron beam diameter. The HOS growth experiments using silicon on insulator substrates with lithographically formed trenches show that perfect separation of the two areas becomes possible by optimizing the cross-sectional geometry of the trenches, especially using dry etching.