首页>
外国专利>
STRUCTURE AND METHOD OF FABRICATING A HYBRID SUBSTRATE FOR HIGH-PERFORMANCE HYBRID-ORIENTATION SILICON-ON-INSULATOR CMOS DEVICES
STRUCTURE AND METHOD OF FABRICATING A HYBRID SUBSTRATE FOR HIGH-PERFORMANCE HYBRID-ORIENTATION SILICON-ON-INSULATOR CMOS DEVICES
展开▼
机译:高性能混合定向绝缘硅CMOS器件的混合基板的结构和制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention provides a method of integrating semiconductor devices such that different types of devices are formed upon a specific crystal orientation of a hybrid substrate that enhances the performance of each type of device. Specifically, the present invention provides a method of integrating semiconductor devices such that pFETs are located on a (110) crystallographic plane, while nFETs are located on a (100) crystallographic plane of a planar hybrid substrate. The method of the present invention also improves the performance of creating SOI-like devices with a combination of a buried insulator and counter-doping layers. The present invention also relates to semiconductor structures that are formed utilizing the method of the present invention.
展开▼