Type-Ⅱ 450-550 nm InGaN-GaNAs for Quantum Well Active Region Lasers and Light Emitters on GaN

摘要

We present and analyze a new nitride-based gain media by utilizing type- Ⅱ InGaN-GaNAs quantum well (QW) on GaN. This novel III-N based type-Ⅱ QW allows extension of the emission wavelength from blue regime (450-nm) to yellow regime (550-nm) with relatively-low In-content in the QW, while maintaining a large electron-hole wavefunction overlap. High electron-hole wavefunction overlap (≥ 65%-70%) can be obtained by careful energy band engineering to take advantage of the polarization-induced electric field. Our analysis shows this new type-Ⅱ QW gain media offers wide emission wavelength coverage, from pure blue (～450-nm) to yellow-green (～530-nm). Design and optimization for pure blue (～450-nm), green (～515-nm) and yellow-green (～530-nm) emission structures are also presented. This method may allow realization of green laser diode on GaN, as well as paving the way to low cost, truly monolithic solid-state white light source.