GaN SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING BUFFER LAYER WITH ENHANCED STRUCTURE AND ACTIVE LAYER WITH QUANTUM WELL STRUCTURE FOR REDUCING CRYSTAL DEFECTS AND ACQUIRING HIGH BRIGHTNESS AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A GaN semiconductor light emitting device and a manufacturing method thereof are provided to reduce crystal defects and to acquire high brightness by using a buffer layer with an enhanced structure and an active layer with a quantum well structure. CONSTITUTION: A GaN semiconductor light emitting device includes a substrate(102), a GaN based buffer layer(104) on the substrate, a first In-doped GaN layer(106) on the buffer layer, an N type first electrode layer(108) on the first In-doped GaN layer, an active layer(116) for emitting light on the first electrode layer, a p-GaN layer(118) on the active layer and an InxGa1-xN/InyGa1-yN super lattice structure layer(120) on the p-GaN layer. The GaN based buffer layer is composed of one selected from a group consisting of an InGaN/GaN super lattice structure and a stacked structure of InxGa1-xN/GaN and AlxInyGa1-x,yN/InxGa1-xN/GaN. The active layer is composed of a single quantum well structure or a multi-quantum well structure.