MANUFACTURING METHOD OF A VERTICAL STRUCTURE GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DEVICE FOR FORMING A SINGLE CRYSTAL GROWTH LAYER OF A HIGH GRADE WITHOUT A GROWTH OF A BUFFER LAYER

摘要

PURPOSE: A manufacturing method of a vertical structure gallium nitride based semiconductor light emitting device is provided to control a crystal defect of the light emitting device by easily separating a growth substrate from a light emitting structure using a wet-chemically etching.;CONSTITUTION: A sacrificial layer is formed on the single-side of a gallium nitride-based semiconductor substrate. An ion implantation region(130) by the ion implantation is formed on the single-side of the gallium nitride-based semiconductor substrate. A light emitting structure(160) including sequentially laminated a first conductive type nitride layer(161), an active layer(163) and a second conductive type nitride(165) are formed on the ion implantation region. A metal layer(170) for a first junction is formed on the second conductive type nitride layer. A support substrate formed the metal layer for a second junction is welded on the metal layer for the first junction. The growth substrate is separated from the light emitting structure with etching the sacrificial layer.;COPYRIGHT KIPO 2010