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Enhanced performance of nitride-based ultraviolet vertical-injection light-emitting diodes by non-insulation current blocking layer and textured surface

机译:非绝缘电流阻挡层和带纹理的表面增强了氮化物基紫外垂直注入发光二极管的性能

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摘要

For the purpose of light extraction and efficiency enhancement, the nitride-based ultraviolet vertical-injection light-emitting diodes (UV-VLEDs) with non-insulation current blocking layer (n-CBL) and optimized textured surface were fabricated. The optical and electrical characteristics were investigated in this n-CBL UV-VLED. Furthermore, the efficiency of optimized structure was improved by 5 ~ 6 times compared to our reference.
机译:为了光提取和提高效率,制造了具有非绝缘电流阻挡层(n-CBL)和优化纹理表面的氮化物基紫外垂直注入发光二极管(UV-VLED)。在此n-CBL UV-VLED中研究了光学和电气特性。此外,与我们的参考文献相比,优化结构的效率提高了5〜6倍。

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