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首页> 外文期刊>Optics Letters >Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures
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Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures

机译:具有高度集成的表面纹理的垂直注入GaN基发光二极管的光提取增强

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摘要

We report on the fabrication of high-efficiency vertical-injection GaN-based light-emitting diodes (LEDs) fabricated with integrated surface textures. An optical ray-tracing simulation shows that the high integration of surface textures can effectively enhance the light-extraction efficiency. The integrated surface textures are fabricated on the top surface of LEDs by generating hexagonal cones on the periodically corrugated surfaces of n-GaN. Compared to reference LEDs without textures, LEDs fabricated with integrated surface textures show an enhancement of the output power by a factor of 2.59, which is in agreement with the calculated results.
机译:我们报告了具有集成表面纹理的高效垂直注入GaN基发光二极管(LED)的制造。光线跟踪仿真表明,表面纹理的高度集成可以有效提高光提取效率。通过在n-GaN的周期性波纹表面上生成六边形圆锥,可以在LED的顶表面上制造出集成的表面纹理。与没有纹理的参考LED相比,具有集成表面纹理的LED显示出的输出功率提高了2.59倍,这与计算结果相符。

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