Further Enhancement of Nitride-Based Near-Ultraviolet Vertical-Injection Light-Emitting Diodes by Adopting a Roughened Mesh-Surface

摘要

In this letter, the nitride-based near-ultraviolet (NUV) vertical-injection light-emitting diodes (VLEDs) with roughened mesh-surface are proposed and demonstrated by a combination of pattern sapphire substrate, wafer bonding, laser lift-off, and chemical wet etching processes. With the help of adopting a roughened mesh-surface, the light–output power (at 350 mA) of the NUV-VLEDs could be further enhanced about 20% as compared with that of the conventional NUV-VLED.