Simulation of resist heating effect with E-beam lithography using Distributed Processing (DP)

摘要

As the design rule with wafer is tightening to sub-100nm, the specification of Mask CD uniformity is steeply tightened too. For instance, according to 2004 ITRS Roadmap updated, the specification of DRAM's CD uniformity requires less then 7nm on 80nm nodes in Yr. 2005. In order to satisfy that specification, it is important to analyze various factors such as e-beam machine error, heating effect, fogging effect, proximity effect, and process errors which cause CD non-uniformity in the mask. In this paper, a simulation method will be introduced to calculate the local and global heating effect by applying DP(Distributed Processing). First, experiments were performed to see heating effects on mask CD uniformity. In case of the ZEP process with 50KeV exposure, the CD error caused by heating effect amounted to 45nm in worst case. Second, heating effect was simulated using DP. Recently, most simulators have been required high accuracy. However, it is inevitable to spend more calculation time. To improve that problem, DP has been adopted in many softwares. In this paper, MPI(Message Passing Interface) library was applied to simulate heating effect. Finally, the experiment and simulated results were compared. As a result, simulation results could explain the CD errors investigated on our experiment. In our experiment, 2D simulation is sufficient to expect CD errors caused by resist heating effect.