Imaging Behavior of Highly Fluorinated Molecular Resists under Extreme UV Radiation

摘要

We propose a concept of organic small molecule-based EUV resists that do not require sub-stoichiometric ingredients.Based on our previous results with highly fluorinated electron-beam (e-beam) resists, we designed amorphous smallmolecules equipped with perfluoroalkyl ether (PFAE) chains. The synthesis of the prototype was carried outsuccessfully, and its physical properties, imaging mechanism, and performance were all evaluated under e-beamexposure conditions. Although the prototype showed slightly low sensitivity to EUV irradiation, we were able to mitigatethe issue by appending other cross-linkable functional moieties. The modified version showed decent negative-tonepatterning performance under e-beam exposure and could form images under EUV irradiation and the patterndevelopment step using highly fluorinated solvents.