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Charge dissipation by use of a novel aqueous based quaternary ammonium compound for use in electron beam lithography on non-conductive substrates

机译:通过使用新型的水基季铵化合物消散电荷,用于非导电衬底上的电子束光刻

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摘要

Electron beam lithography (EBL) is commonly used for patterning at the nanoscale by way of a focused electron beam.This process can lead to charge accumulation on the surface of the resist when used in conjunction with non-conductivesubstrate materials, impacting lithographic quality producing egregious shape placement inaccuracies. Current practicerequires the use of a deposited metal or conductive polymer film to facilitate charge dissipation at the surface. Such filmsare often unstable, incompatible and/or can be difficult to remove after exposure. This paper presents the findings of astudy of a novel aqueous based quaternary ammonium compound for use in EBL for charge dissipation on nonconductivesubstrates. This compound was found to effectively prevent charge accumulation across a broad range ofresist materials while remaining highly stable at room temperature and easily removed with deionized water orisopropanol after EBL exposure.
机译:电子束光刻(EBL)通常用于通过聚焦电子束在纳米级进行图案化。\ r \ n当与非导电基片一起使用时,此过程会导致抗蚀剂表面上的电荷积累材料,影响光刻质量,导致形状放置不正确。当前的实践要求使用沉积的金属或导电聚合物膜来促进表面上的电荷消散。这样的膜通常是不稳定的,不相容的和/或在曝光后难以去除。本文介绍了一种用于EBL的新型水基季铵化合物的研究成果,该化合物可在非导电性基底上消散电荷。发现该化合物可有效防止电荷在多种电阻材料上积累,同时在室温下保持高度稳定,并且在EBL暴露后易于用去离子水或异丙醇除去。

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  • 会议地点 0277-786X;1996-756X
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    University of Pennsylvania, Singh Center for Nanotechnology, 3205 Walnut Street, Philadelphia, PA 19104 USA;

    University of Pennsylvania, Singh Center for Nanotechnology, 3205 Walnut Street, Philadelphia, PA 19104 USA;

    University of Pennsylvania, Singh Center for Nanotechnology, 3205 Walnut Street, Philadelphia, PA 19104 USA;

    University of Pennsylvania, Singh Center for Nanotechnology, 3205 Walnut Street, Philadelphia, PA 19104 USA;

    DisChem, Inc., 17295 Boot Jack Rd, Suite A Ridgway, PA 15853 USA;

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  • 入库时间 2022-08-26 14:32:20

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