Fabrication and characterization of MOS transistor tip integrated micro cantilever

摘要

We fabricate and characterize the metal-oxide-semiconductor (MOS) transistor tip integrated micro cantilever, which is proposed for a future high-density data storage system. The integrated MOS transistor tip as the sensing part has some advantages; it detects the electric signal with the fast speed compared with the previous SPM probes, and it can reduce the required equipments such as the lock-in-amplifier. The MOS transistor tip is fabricated 3-dimensionally, utilizing the lateral diffusion and the anisotropic wet etching with TMAH solution, since the etch rate of {211} plane is much higher than those of {100} or {111} planes. The gate area is formed by self-aligned technique, using crystallographic dependant wet etching. The well-known convex corner compensation pattern is used for the gate length control during the tip fabrication process. The characteristics of the fabricated device are measured and the results show the well-established detection properties.