Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan;
Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan;
β-SiC; whisker; stacking fault; growth; carbothermal reduction;
机译:碳热还原法合成β-SiC晶须的堆垛层错及生长方向
机译:碳热还原法合成AlN晶须生长的热力学和动力学考虑
机译:SiC纳米粒子对碳热减少获得的核 - 莫来石复合材料中SiC晶须原位合成的影响
机译:β-SiC晶须的堆叠故障和生长方向由Carbothotmal减少合成
机译:Mg和Mg合金堆垛层错和长周期堆垛有序结构的第一性原理研究
机译:通过室温μ-光致发光和μ-拉曼分析表征3C-SiC外延层截面中的4H和6H类堆积缺陷
机译:在β-SIC晶须堆叠故障