Stacking Fault and Growth Direction of beta-SiC Whisker Synthesized by Carbothermal Reduction

摘要

The whisker morphology and whisker content in the beta-SiC powder synthesized from SiO2 and carbon black were more closely related to SiO partial pressure than reaction temperature. By controlling the SiO partial pressure through the change of stacking manner and the mixing of starting powder, deflected whiskers were successfully synthesized. The whisker deflection deeply Jepended on the inserted direction of stacking fault. The defiection angles of the whiskers synthesized from the mixed and the stacked powder were 55 deg. and 109 deg.', respectively The deflected whisker with 55` deg. was formed by the existence of stacking fault planes not perpendicular to the growth direction of the whisker. The deflected whisker with 109 deg. had three different directions ofstacking faults of { 1 1 1 } planes including twin faults.