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Modeling of Concentration Profiles Redistribution of Alloying Impurity at Local Oxidation of Silicon

机译:硅局部氧化时合金杂质的浓度分布再分布建模

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摘要

The mathematical models of technological processes of designing and forming of device structures integrated circuits (IC) in present paper. Modeling distribution of concentration profiles for different types of technological processes is realized.
机译:本文设计和构造器件结构集成电路(IC)的工艺过程的数学模型。实现了针对不同类型的工艺过程的浓度分布的建模分布。

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