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Methods for modeling the impurity concentration of a single crystal silicon ingot
Methods for modeling the impurity concentration of a single crystal silicon ingot
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机译:用于建模单晶硅锭的杂质浓度的方法
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摘要
Methods for forming single crystal silicon ingots in which plural sample rods are grown from the melt are disclosed. A parameter related to the impurity concentration of the melt or ingot is measured. In some embodiments, the sample rods each have a diameter less than the diameter of the product ingot.
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