埋氧厚度对硅膜阈值电压及硼杂质分布的影响

摘要

通过模拟局部氧化隔离SOI NMOSFET器件硅膜和埋氧界面处的应力分布随埋氧厚度的变化情况,分析其对硼杂质再分布的影响机制,得出SOI NMOSFET器件阈值电压对埋氧厚度的依赖关系.模拟结果表明,在原工艺流程完成后再进行一次退火处理,可以减弱应力对器件阈值电压的影响.%The interface stress distribution between silicon and buried-oxide of a LOCOS isolated SOI MOSFET is simulated and its influence to the redistribution of Boron is analyzed. The relationship between threshold voltage and thickness of buried-oxide is obtained. The simulation result shows that the effect of interface stress to thresh-oel voltage can be reduced by adding an annealing process.