Molecular Beam Epitaxy of Heterostructures on the Basis of III-V Materials for UHF Transistors

摘要

Described is MBE technology, whose essence is the growth of heterostructures for UHF transistors including nitride technology. We demonstrate that buffer layer optimization allows improving GaAs FETs parameters. Procedures of AlGaAs/InGaAs/GaAs heterostru