AN IMPROVED MOLECULAR BEAM EPITAXY MULTI CHAMBER CLUSTER TOOL AND PROCESSES FOR INTEGRATION OF MULTIPLE GROWTH COMBINATION OF GROUP III-V SEMICONDUCTOR HETEROSTRUCTURES

摘要

The present invention relates to an improved Molecular Beam Epitaxy (MBE) integrated multi chamber cluster tool/machine for the integration of multiple growth combinations of Group III-V semiconductor heterostructures on Silicon substrate. Further the present invention relates to an improved MBE tool and epitaxial growth process technique for the integration of different compound semiconductor heterostructures like Gallium Arsenide (GaAs), Indium Phosphide (InP), Gallium Nitride (GaN) and Silicon Germanium (SiGe) on Silicon substrate. The machine comprises a main/central chamber for temporary storage of the wafer in between transfer from one MBE chamber/subsystem to other for subsequent epitaxial growth; a storage chamber operatively connected with the main chamber for storing the final product and recovery of same; a loading chamber operatively for introduced the silicon wafer in the integrated MBE cluster tool ; degassing chamber operatively connected with the main chamber; plurality of sub chambers .