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A Study of the Geometrical Correction Factor on the Sensitivity of the Transversal Piezoresistive Sensors

机译:横向压阻传感器灵敏度的几何校正因子研究

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摘要

The sensitivity of four-terminal devices like Hall and piezoresistive sensors is very dependent on its geometric parameters. This dependence is modeled by the Geometrical Correction Factor (G). The majority of these studies take very time-consumption analytical calculations for the analysis of G. In order to simplify this analysis, we present numerical analysis for the most common geometrical forms of four-terminal devices and propose suitable aspect ratios of its geometric parameters for maximization of G. This result is general for any four-terminal-shaped sensors. Experimental result of a new topology of pressure sensor is also presented, which maximizes G in a comparison with conventional four-terminal devices and also improves its sensitivity.
机译:霍尔和压阻传感器等四端子设备的灵敏度非常取决于其几何参数。这种依赖性通过几何校正因子(G)建模。这些研究中的大多数都对G的分析进行了非常耗时的分析计算。为了简化此分析,我们对四端子设备的最常见几何形式进行了数值分析,并提出了其几何参数的合适长宽比。 G的最大值。对于任何四端子形传感器,此结果都是通用的。还提出了一种新的压力传感器拓扑结构的实验结果,与传统的四端子设备相比,该拓扑结构最大程度地提高了G值,并提高了其灵敏度。

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  • 来源
  • 会议地点 Natal(BR);Natal(BR)
  • 作者单位

    School of Electrical and Computer Engineering - FEEC and Center for Semiconductor Components - CCS, University of Campinas, Campinas, Sao Paulo, Brazil;

    rnSchool of Electrical and Computer Engineering - FEEC and Center for Semiconductor Components - CCS, University of Campinas, Campinas, Sao Paulo, Brazil;

    rnSchool of Electrical and Computer Engineering - FEEC and Center for Semiconductor Components - CCS, University of Campinas, Campinas, Sao Paulo, Brazil;

    rnSchool of Electrical and Computer Engineering - FEEC and Center for Semiconductor Components - CCS, University of Campinas, Campinas, Sao Paulo, Brazil;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 微电子学、集成电路(IC);
  • 关键词

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