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首页> 外文期刊>Japanese journal of applied physics >Analytical and Experimental Study on Sensitivity of Planar Piezoresistive Vibration Sensor
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Analytical and Experimental Study on Sensitivity of Planar Piezoresistive Vibration Sensor

机译:平面压阻振动传感器灵敏度的分析与实验研究

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摘要

We are engaged in developing a planar high-sensitivity piezoresistive vibration sensor with lower process cost and fewer package difficulties. For the pursuit of high sensitivity, the design and optimization of the sensor structure are studied together via a theoretical principle approach and finite-element method (FEM) analysis. The effects of the vibration sensor dimensions, including the solid width and length of flexure, the structure thickness, and the piezoresistor width, have been analyzed comprehensively. Design guidelines are presented for the fabrication of vibration sensors, and the sensitive position of the piezoresistor on a flexure beam is obtained for resolution optimization. To calculate the relative resistance changes in one-beam flexure, the theoretical approach and the FEM simulation are used. The results of the two methods agree well, the relative error being only 3.8%. Moreover, dynamic measurement of the structure of the prototype vibration sensor is implemented. The calculated and measured results of the relative displacement between the proof mass and substrate are in good agreement, which also demonstrated the FEM-based design to be reasonable.
机译:我们致力于开发一种平面高灵敏度压阻式振动传感器,其工艺成本更低且封装难度更低。为了追求高灵敏度,通过理论原理方法和有限元方法(FEM)分析一起研究了传感器结构的设计和优化。振动传感器尺寸的影响,包括实心宽度和挠曲长度,结构厚度和压敏电阻宽度,已得到全面分析。提出了制造振动传感器的设计指南,并获得了压敏电阻在挠性梁上的敏感位置,以实现分辨率优化。为了计算单梁弯曲的相对电阻变化,使用了理论方法和有限元模拟。两种方法的结果吻合得很好,相对误差仅为3.8%。此外,对原型振动传感器的结构进行动态测量。验证质量块和基片之间相对位移的计算和测量结果吻合良好,这也证明了基于FEM的设计是合理的。

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  • 来源
    《Japanese journal of applied physics》 |2013年第10issue1期|106502.1-106502.9|共9页
  • 作者单位

    Research Center for Ubiquitous MEMS and Micro Engineering (UMEMSME), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8564, Japan;

    Research Center for Ubiquitous MEMS and Micro Engineering (UMEMSME), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8564, Japan;

    Research Center for Ubiquitous MEMS and Micro Engineering (UMEMSME), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8564, Japan;

    Research Center for Ubiquitous MEMS and Micro Engineering (UMEMSME), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8564, Japan;

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