Rapid and efficient method for numerical quantum mechanical simulation of gate-all-around nanowire transistors

摘要

In this paper, we propose a 2D numerical quantum simulator for silicon gate-all-around (GAA) nanowire transistors with cylindrical cross-section within the effective mass approximation. The Hamiltonian is expanded in the uncoupled mode space and the nonequilibrium Green's function (NEGF) formalism is adopted to calculate the electron density and current. An approximated isotropic effective mass is used in conjunction with optimizing the flatband voltage (VFB) as a fitting parameter. Verification of the results is done through a comparison with those obtained from a published 3D simulator and excellent agreement is achieved.