In this work, we present a three-dimensional, self-consistent simulation method for quantum transport in ultra-small semiconductor nanostructures. We examine some properties of single and tri-gate silicon nanowire transistors such as: quantum interference effects, discrete dopant effects, and vortex formation. Additionally, we present a method for introducing separable phonon scattering mechanism as a real space self-energy term. The method of separable scattering mechanisms is used to determine the modified transfer characteristics, phonon moderated ballistic to diffusive crossover, and drain induced barrier lowering in silicon nanowire transistors. The possibility of III-V nanowire transistors is investigated, as we examine 30 and 10 nm channel length InAs tri-gate quantum wire transistors. A performance comparison is then made between 10 nm channel length silicon and InAs tri-gate quantum wire transistors. In general, we found that discrete dopants have a major effect on nanowire transistors. The observed effects included shifts in threshold voltage and other device parameters, the formation of vortices, and the formation of resonant levels in the channel. Further, we find that scattering plays a vital role in the operation of nanowire transistors, as well. Scattering causes the ballistic-to-diffusive crossover to occur at much smaller channel lengths than previously thought. We find that III-V nanowire transistors have excellent device characteristics, but they do not compete well with silicon nanowire transistors. Finally, we suggest future work.
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