首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XIX pt.2 >Design-Based Metrology: Advanced Automation for CD-SEM Recipe Generation
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Design-Based Metrology: Advanced Automation for CD-SEM Recipe Generation

机译:基于设计的计量:CD-SEM配方生成的高级自动化

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The procedure for properly implementing OPC for a new technology node or chip design involves multiple steps: selection of the RET (resolution enhance technique), selection of design rules, OPC Model Building, OPC Verification, CD control quantification (across chip, reticle, wafer, focus, exposure, etc) , calibration of Optical Rule Checks (ORC), and other verification steps. Many of these steps require up to thousands of wafer measurements, and while state-of-the-art CD-SEM tools provide automated metrology for production, manually creating a CD recipe with thousands of unique sites is extremely tedious and error-prone. This places a practical limit on both the quality and number of measurements that can be acquired during the technology development and qualification period. At the same time, the number of measurements required to qualify a new reticle design has increased drastically due to the growing complexity of RET and diminishing tolerances. To meet this challenge, a direct and automated link from the design systems to the process metrology tools is needed. Novel methodologies must also be developed to enable automated generation of the recipe from the design inputs and to translate the flood of metrology results into information that can improve the design, mask data processing, or the patterning process. To facilitate this two-way data flow, a new framework has been created enabling true Design-Based Metrology (DBM), and an application named OPC-Check has been developed to operate within this framework. This DBM framework provides the common language and interface that facilitates the direct transfer of desired measurement locations from the design to the metrology tool. This link is a critical element in Design for Manufacturability (DFM) efforts, a central theme in many presentations at Microlithography 2005. This article discusses the significant benefits of the tight integration of design and process metrology for OPC implementation in a new technology node, and provides some examples of the novel OPC-Check application as currently implemented at AMD SDC with Applied Materials CD-SEM tools.
机译:为新技术节点或芯片设计正确实施OPC的过程涉及多个步骤:选择RET(分辨率增强技术),选择设计规则,OPC模型构建,OPC验证,CD控制量化(跨芯片,标线片,晶圆) ,焦点,曝光等),光学规则检查(ORC)的校准以及其他验证步骤。其中许多步骤最多需要数千次晶圆测量,而最先进的CD-SEM工具为生产提供了自动计量功能,而手动创建具有数千个独特位置的CD配方非常繁琐且容易出错。这对在技术开发和认证期间可以获取的测量的质量和数量都提出了实际的限制。同时,由于RET的复杂性不断提高且公差不断减小,验证一种新型标线设计所需的测量数量已大大增加。为了应对这一挑战,需要从设计系统到过程计量工具的直接和自动链接。还必须开发新颖的方法,以使能从设计输入中自动生成配方,并将大量的计量结果转换为可改善设计,掩膜数据处理或图案化过程的信息。为了促进这种双向数据流,已创建了一个新框架,以实现真正的基于设计的计量学(DBM),并开发了一个名为OPC-Check的应用程序以在此框架内运行。该DBM框架提供了通用的语言和界面,有助于将所需的测量位置从设计直接转移到度量工具。此链接是可制造性设计(DFM)工作中的关键元素,而DFM是Microlithography 2005上许多演讲的中心主题。本文讨论了将设计和工艺计量紧密集成以在新技术节点中进行OPC实施的重大好处,以及提供了一些新的OPC-Check应用程序的示例,该应用程序目前由AMD SDC使用Applied Materials CD-SEM工具实现。

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