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Metrology for the next generation of semiconductordevices

机译:下一代半导体的计量设备

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摘要

The semiconductor industry continues to produce ever smaller devices that are ever more complex in shape and contain ever more types of materials. The ultimate sizes and functionality of these new devices will be affected by fundamental and engineering limits such as heat dissipation, carrier mobility and fault tolerance thresholds. At present, it is unclear which are the best measurement methods needed to evaluate the nanometre-scale features of such devices and how the fundamental limits will affect the required metrology. Here, we review state-of-the-art dimensional metrology methods for integrated circuits, considering the advantages, limitations and potential improvements of the various approaches. We describe how integrated circuit device design and industry requirements will affect lithography options and consequently metrology requirements. We also discuss potentially powerful emerging technologies and highlight measurement problems that at present have no obvious solution.
机译:半导体工业继续生产形状越来越复杂,包含越来越多材料的越来越小的器件。这些新设备的最终尺寸和功能将受到基本和工程限制的影响,例如散热,载流子迁移率和容错阈值。目前,尚不清楚哪些是评估此类设备的纳米级特征所需的最佳测量方法,以及基本限制将如何影响所需的计量学。在这里,我们回顾了集成电路的最新尺寸度量方法,同时考虑了各种方法的优点,局限性和潜在的改进。我们描述了集成电路器件设计和行业要求将如何影响光刻选项,进而影响计量要求。我们还将讨论潜在强大的新兴技术,并重点介绍目前尚无明显解决方案的测量问题。

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