Low Power Operation of Resistive Switching Memory Device Using Novel W/Ge0.4Se0.6/Cu/Al Structure

摘要

Bipolar resistive switching memory device with a low power operation (200 muA/1.3 V) in a W/Ge_0.4Se_0.6/Cu/Al structure has been investigated. A stronger Cu chain formation can be observed by monitoring both the erase voltage and current. The low resistance state (R_Low) decreases with increasing the programming current from InA to 500 muA, which can be useful for multi-level of data storage. This resistive memory device has a large threshold voltage of ~0.5 V, good resistance ratio (R_High/R_Low) of 1.6 times 10², good endurance of >1.5 times 10⁵ cycles, and excellent retention (>11 hours) with a resistance ratio of > 1.3 times 10² at 150degC can be used in future nonvolatile memories.