Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices

摘要

Amorphous silicon carbide (a-SiC) based resistive memory (RM) Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated. All four possible modes of nonpolar resistive switching were achieved with ON/OFF ratio in the range 106–108. Detailed current-voltage I-V characteristics analysis suggests that the conduction mechanism in low resistance state is due to the formation of metallic filaments. Schottky emission is proven to be the dominant conduction mechanism in high resistance state which results from the Schottky contacts between the metal electrodes and SiC. ON/OFF ratios exceeding 107 over 10 years were also predicted from state retention characterizations. These results suggest promising application potentials for Cu/a-SiC/Au RMs.