METHOD OF MANUFACTURING RESISTIVE SWITCHING MEMORY USING LOW TEMPERATURE HIGH PRESSURE ANNEALING AND RESISTIVE SWITCHING MEMORY PREPARED BY USING THE METHOD

摘要

PURPOSE: A method for manufacturing a resistance random access memory using low temperature and high pressure heating and a resistance random access memory manufactured using the same are provided to improve durability by increasing an adhesive force with a bottom electrode by depositing the optimal thickness of silicon dioxide and titanium on a silicon substrate. CONSTITUTION: A substrate is prepared(S10). A bottom electrode is formed by depositing a metal on the substrate(S20). An oxide layer is formed on a top portion of the bottom electrode(S30). The oxide layer is heat-treated and the oxide layer is crystallized(S40). A reactive metal is deposited on the top portion of the oxide layer(S50). An upper electrode is formed on the top portion of a reactive metal layer by depositing the non-reactive meta(S60).