III-V semiconductors; aluminium compounds; gallium compounds; monolithic integrated circuits; polarisation; power integrated circuits; power semiconductor diodes; power transistors; wide band gap semiconductors; 2D electron gas; 2D hole gas; 2DEG; 2DHG; GaN-AlGaN-GaN; PJ technologies; high voltage transistors; monolithic power integrated circuit technology; n-channel transistors; p-channel transistors; polarization charges; polarization-junction platform; polarization-junction technologies; temperature independent properties; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Temperature; Two dimensional hole gas;
机译:用于完全计算机辅助设计兼容的单片微波集成电路开发的三维单片微波集成电路技术
机译:功率MOSFET及其单片集成自供电电路的优化
机译:具有GaN的弯曲波导的单片光子集成电路
机译:极化结平台上基于GaN的单片功率集成电路技术概述
机译:高速,高功率镓铟磷化铟/砷化镓HBT及其在微波整体集成电路(MMICS)中的应用
机译:高性能和低功耗单片三维3μm以下50微米多晶硅薄膜晶体管(TFT)电路
机译:基于GaN的NMOS数字逻辑门电路与电子模式电源GaN MoShemts的单片集成
机译:用于毫米波和亚毫米波电源的先进高电子迁移率晶体管(HEmT)单片毫米波集成电路(mmIC)电路