Advanced High Electron Mobility Transistor (HEMT) Monolithic Millimeter- Wave Integrated Circuit (MMIC) Circuits for Millimeter- and Submillimeter-Wave Power Sources

摘要

This paper focuses on InP-based, HEMT Monolithic Millimeter-wave Integrated Circuit (MMIC) power amplifiers for applications to heterodyne receivers, transmitters, and communication circuits. Recently, JPL has developed several HEMT MMIC circuits using HRL Laboratories' 0.1 micrometer InP HEMT technology with unprecedented high frequency performance and output power. Results include an 80 OHz bandwidth power amplifier to 145 GHz, a 15-25 mW amplifier to 170 GHz and a HEMT active doubler to 300 GHz, the highest frequency HEMT doubler circuit reported to date. Included here is a description of the design and testing of the circuits, and a discussion of the methods used in measuring MMICs above 200 UHz. These circuits are particularly useful in local oscillators for heterodyne receivers at THz frequencies.